Williams, Elissa H.; Schreifels, John A.; Rao, Mulpuri V.; Davydov, Albert V.; Oleshko, Vladimir P.; Lin, Nancy J.; Steffens, Kristen L.; Krylyuk, Sergiy; Bertness, Kris A.; Manocchi, Amy K.; et al Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications Journal of Materials Research (2013), 28(1), 68-77.
Elissa H. Williams, Albert V. Davydov, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kris A. Bertness, Amy K.Manocchi, John A. Schreifels, Mulpuri V. Rao, Solution-based functionalization of galliumnitride nanowires for protein sensor development, Surface Science 627 (2014) 23–28
Immobilization of streptavidin on 4H-SiC for biosensor development, Williams, Elissa H.; Davydov, Albert V.; Motayed, Abhishek; Sundaresan, Siddarth G.; Bocchini, Peter; Richter, Lee J.; Stan, Gheorghe; Steffens, Kristen; Zangmeister, Rebecca; Schreifels, John A.; Rao, Mulpuri V., Applied Surface Science, Volume 258, Issue 16, 1 June 2012, Pages 6056–6063.
Real-time electrical detection of the formation and destruction of lipid bilayers on silicon nanowire devices, Elissa H. Williams, Jong-Yoon Ha, Melanie Juba, Barney Bishop, Sergiy Krylyuk, Abhishek Motayed, Mulpuri V. Rao, John A. Schreifels, Albert V. Davydov, Sensing and Bio-Sensing Research 4 (2015) 103–108
[5] "The maximum of phosphate adsorption at pH 4.0: Why it appears on aluminum oxides but not on iron oxides." Huang, Xiao; Foster, Gregory D.; Honeychuck, Robert V.; Schreifels, John A.; Langmuir, v 25, n 8, p 4450-4461, April 21, 2009
[4] "Ultra-low resistivity Al+ implanted 4H-SiC obtained by microwave annealing and a protective graphite cap." Sundaresan, Siddarth G.; Mahadik, Nadeemullah A.; Qadri, Syed B.; Schreifels, John A.; Tian, Yong-Lai; Zhang, Qingchun; Gomar-Nadal, Elb a; Rao, Mulpuri V.; Solid-State Electronics, v 52, n 1, p 140-145, January 2008
[3] "Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps." Sundaresan,; Murthy, M.; Rao, M.V.; Schreifels, J.A.; Mastro, M.A.; Eddy, C.R.; Holm, R.T.; Henry, R.L.; Freitas, J.A., Jnr; Gomar-Nadal, E.; Vispute, R.D.; Yong-Lai Tian; Semiconductor Science and Technology, v 22, n 10, p 1151-6, Oct. 2007
[2] "Ultrahigh-temperature microwave annealing of Al+- And P +-implanted 4H-SiC." Sundaresan, Siddarth G; Rao, Mulpuri V.; Tian, Yong-Lai; Ridgway, Mark C.; Schreifels, John A.; Kopanski, Joseph J.; Journal of Applied Physics, v 101, n 7, 2007
[1] "Comparison of solid-state microwave annealing with conventional furnace annealing of ion-implanted SiC." Sundaresan, Siddarth G.; Rao, Mulpuri V.; Tian, Yonglai; Schreifels, John A.; Wood, Mark C.; Jones, Kenneth A.; Davydov, Albert V.; Jour nal of Electronic Materials, v 36, n 4, p 324-331, April 2007
Created in 2011. Last update: January, 2019.