Estela Blaisten-Barojas

1. K. Ikossi-Anastasiou, S. Binari, B. Boos and G. Kelner, "Smooth Surface Morphology for Wet Selective and Non-selective Chemical Etching for InP," Navy Case No. 76,616, U.S. Patent #5772907, 6/30/1998.

2. K. Ikossi, "Antimonides and near 6.1Å III-V semiconductors on insulating substrates," Navy Case No. 84,001, in process, US Patent Application #20040201036, Patent Pending.

3. K. Ikossi, "Low Contact Resistance Ohmic Contacts to n-type Gallium Antimonides," Navy Case 84,059, in process.

4. K. Ikossi, S. Binari, S. Katzer, W. Rabinovich, H. Dietrich, "DEFECTECTOMY: A method of recovering large-area multilayer compound semiconductor devices for electro-optical applications," Navy Case No. 83,189, in process.

5. K. Ikossi-Anastasiou, "High efficiency monolithic tandem current matched graded AlGaAs/GaAs/GaAsSb crystalline thin film solar cell," LSU Office of Technology Transfer Disclosure # 9414.

1. S. K. Guharay, K. Ikossi, D. Ioannou, B. Veytsman, E. Blaisten-Barojas, “Nanoscience & Nanotechnology Education at George Mason University,” Second International Nanotechnology Conference on Communications and Cooperation, Washington DC, May, 2006.

2. K. Ikossi, “The next generation electronics” to be presented at the 2006-Capital Science Conference, Washington DC, March 2006.

3. K. Ikossi, “Nanoamplifiers,” nanotech2004 conference, Baltimore MD, November, 2004.

4. K. Ikossi, “Writing Winning Proposals,” Symposium key note address, 2004 IEEE-WIE Spring Symposium, College Park Maryland, May 2004.

5. R. Magno, J. B. Boos, P.M. Campbell, B.R. Bennett, E. R. Glaser, M.G. Ancona, B.P. Tinkham, D. Park, N.A. Papanicolaou, K. Ikossi, B.V. Shanabrook, S.E. Mohney “InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor,” Proceedings of International Semiconductor Device Research Symposium, pp. 202-203, December 2003.

6. R. Magno, J.B. Boos, B.R. Bennett, K. Ikossi, E.R. Glaser, N.A. Papanicolaou, M.G. Ancona, B.P. Tinkham, W. Kruppa, M.J. Yang, D. Park, B.V. Shanabrook, J. Mittereder, W. Chang, K.D. Hobart, R. Bass, and H.B. Dietrich, S.E. Mohney, S. Wang, J. Robinson, R. Tsai, A. Gutierrez, “High Speed, Low Power Electronics using Sb-based semiconductors,” Proceedings of Device Research Conference, Compound Semiconductors pp.175-176, August 2003.

7. K. Ikossi, “InAs Device Process Development and Characterization,” Naval Research Laboratory, Unclassified Public Reports, NRL/FR/6853—03-10, 1026, May 2003.

8. J.B. Boos, R. Magno, B.R. Bennett, K. Ikossi, M.G. Ancona, W. Kruppa, D. Park, M.J. Yang, K.D. Hobart, J. Mittereder, W. Chang, R. Bass, E. R. Glaser, N. A. Papanicolaou, B. V. Shanabrook and H. B. Dietrich, S. E. Mohney, "Contact Metallization for High Speed, Low Power Sb-based Electronics," Invited talk, International Conference on Metallurgical Coatings and Thin Films (ICMCTF), San Diego, April 2003.

9. J. B. Boos, B. R. Bennett, R. Magno, K. Ikossi, E. R. Glaser, N. A. Papanicolaou, B. V. Shanabrook, M. G. Ancona, W. Kruppa, M. J. Yang, D. Park, J. Mittereder, W. Chang, K. D. Hobart, R. Bass, and H. B. Dietrich, "High Speed, Low Power Sb-based Electronics," Invited talk, Topical Workshop on Heterostructure Microelectronics (TWHM 2003), Okinawa, Japan, January 2003.

10. R. Magno, B. R. Bennett, K. Ikossi, E. R. Glaser, N. Papanicolaou, J. B. Boos, M. G. Ancona, B. V. Shanabrook, and B. Tinkham, "MBE growth of InAlAsSb/InGaSb heterostructures," 6.1Åmaterials and device workshop, January 2003.

11. K. Ikossi, M. Goldenberg and J. Mittereder, "Metallization Options and annealing Temperatures for Low Contact Resistance Ohmic Contacts to n-Type GaSb." Solid State Electronics, vol. 46, No.10, pp. 1627-1631, August 2002.

12. K. Ikossi, "Device Processing Issues for High Temperature III-Nitride Electronic Material, Invited, GRC Conference on High Temperature Materials, Processes and Diagnostics, Colby College, Waterville ME, August 2002.

13. R. Magno, B.R. Bennett, K. Ikossi, M.G. Ancona, E.R. Glaser, N. Papanicolaou, J.B. Boos, B.V. Shanabrook, and A. Gutierrez, " Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices," IEEE Lester Eastman Conference on High Performance Devices, University of Delaware, Proceedings pp. 27-29, August, 2002.

14. K. Ikossi, W.S. Rabinovich, D.S. Katzer, S.C. Binari, J. Mittereder, P.G. Goetz, "Multiple Quantum Well PIN optoelectronic devices and a method of restoring failed device characteristics." Invited, Microelectronics Reliability Journal, vol. 42, No.7, pp. 1021-1028, June 2002.

15. R. Magno, B. R. Bennett, K. Ikossi, M. G. Ancona, E. R. Glaser, N. Papanicolaou, J. B. Boos, B. V. Shanabrook, A. Gutierrez “Antimony Based quaternary alloys for high speed low power electronic devices,” High Performance Devices, 2003 Proceedings, IEEE Leaster Eastmen Conference, pp. 288-296, August 2002.

16. R. Magno, B. R. Bennett, K. Ikossi, E. R. Glaser, N. Papanicolaou, J. B. Boos, B. V. Shanabrook, "MBE growth of Antimony-based Quaternary Alloys for Electronic Devices“, 2002 Electronic Materials Conference, June 2002.

17. B.R. Bennett, R. Magno K. Ikossi, N. Papanicolaou, J.B. Boos, and B.V. Shanabrook, "Controlled n-type Doping of Antimonide/Arsenide Heterostructures using GaTe," 2002 International MBE Conference, pp. 183-184, September 2002.

18. P.B. Klein, S.C. Binari, K. Ikossi, D.D. Koleske, A.E. Wickenden and R.L. Henry, "Traps in GaN-based Microwave Devices," NRL Review, Electronics and Electromagnets Section, pp.122-124, 2002.

19. P.B. Klein, S.C. Binari, K. Ikossi, A.E. Wickenden, D.D. Koleske, and R.L. Henry, "The effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors" Electronics Letters, Vol. 37, No.25, pp.1550-1551, Dec. 2001.

20. P.B. Klein, S.C. Binari, K. Ikossi, A.E. Wickenden, D.D. Koleske, and R.L. Henry, "Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metal-organic vapor-phase epitaxy" Applied Physics Letters, Vol. 79, No. 21, pp. 3527-3529, Nov. 2001.

21. G.C. Gilbreath, W.S. Rabinovich, T.J. Meehan, M.J. Vilcheck, R. Mahon, R. Burris, M. Ferraro, I. Sokolsky, J.A. Vasquez, C.S. Bovais, K. Cochrell, K.C. Goins, R. Barbehenn, D.S. Katzer, K. Ikossi-Anastasiou, M.J. Montes, "Large-aperture multiple quantum well modulating retroreflector for free-space optical data transfer on unmanned aerial vehicles," Optical Engineering, Vol. 40, No. 7, pp. 1348-1356, July 2001.

22. B. Klein, S.C. Binari, K. Ikossi-Anastasiou, A.E. Wickenden, D.D. Koleske, R.L. Henry, D.S. Katzer "Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors," Electronics Letters, Vol. 37, No.10, pp. 661-662, 2001.

23. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, and R. L. Henry, "Trapping Effects and Microwave Power Performance in AlGaN/GaN HEMTs," IEEE Transactions on Electron Devices, Vol. 48, no.3, pp. 465-471, 2001.

24. K. Ikossi, M. Goldenberg and J. Mittereder, "Metallization Options and annealing Temperatures for Low Contact Resistance Ohmic Contacts to n-Type GaSb." Proceedings of the 2001 International Semiconductor Device Research Symposium (ISDRS), pp.252-255, December 2001, Washington, DC.

25. K. Ikossi, M Goldenberg, J, Mittereder, "Low Contact Resistivity Ohmic Contacts to n-type GaSb", Proceedings of the 68th meeting of the American Physical Society Southeastern Section, November 2001, Charlottesville, Virginia.

26. K. Ikossi, D.S. Katzer, S.C. Binari, and W.S. Rabinovich, "Effects of crystal imperfections in Multiple Quantum Well PIN optoelectronic devices and a method of restoring failed device characteristics," Proceedings the 2001 GaAs Reliability Workshop, pp. 33-36, Baltimore, Maryland, October 2001.

27. W.S. Rabinovich, G.C. Gilbreath, Peter G. Goetz, R. Mahon, D.S. Katzer, K. Ikossi-Anasatasiou, S. Binari, T. J. Meehan, M. Ferraro, I. Sokolsky, J. A. Vasquez, M. J. Vilcheck "InGaAs Multiple Quantum Well Modulating Retro-reflector for Free Space Optical Communications" SPIE proceedings, August 2001.

28. P.B. Klein , S.C. Binari, K. Ikossi-Anastasiou, A.E. Wickenden, D.D. Koleske and R.L. Henry, " Optical Spectroscopy of Deep Traps in AlGaN/GaN HEMT Structures,” Proceedings of the March 2001 Meeting of The American Physical Society, Seattle WA, March 2001.

29. G.C. Gilbreath, T.J. Meehan, W.S. Rabinovich, M.J. Vilcheck, R. Mahon, M. Ferraro, J.A. Vasquez, I. Sokolsky, D.S. Katzer, K. Ikossi-Anastasiou, and P.G. Goetz, " Retromodulator for Optical Tagging for LEO Consumables," Proceedings of the IEEE Aerosense 2001, March 2001.

30. P.G. Goetz, W. S. Rabinovich, R.J. Walters, S. R. Messenger, G.C. Gilbreath, R. Mahon, M. Ferraro, K. Ikossi-Anastasiou, and D. Scott Katzer, "Effects of Proton Irradiation on Large Area InGaAs/AlGaAs Multiple Quantum Well Optical Modulators," Proceedings of the IEEE Aerospace Conference, March 2001.

31. S. C. Binari, J. A. Roussos, K. Ikossi-Anastasiou, D. Park, R. L. Henry, D. D. Koleske, and A. E. Wickenden, " GaN Electronic Materials and Devices for High-Power Microwave Applications," NRL Review, Materials Science and Technology, pp. 154-155, 2000.

32. D.S. Katzer, W.S. Rabinovich, K. Ikossi-Anastasiouand G.C. Gilbreath, ^"

Optimization of buffer layers for InGaAs/AlGaAs PIN optical modulators grown on GaAs substrates by molecular beam epitaxy,” JVST B, Vol.18, No.3 pp. 1609-1613, May/June 2000.

33. S.C. Binari, K. Ikossi-Anastasiou, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, and R.L. Henry "The Influence of Trapping Effects on the Microwave Power Performance of AlGaN/GaN HEMTs," "Next generation mm-wave solid state power workshop." September, 2000.

34. G.C. Gilbreath, W.S. Rabinovich, T.J. Meehan, M.J. Vilcheck, R. Mahon, Ray Burris, M. Ferraro, I. Sokolsky, J.A. Vasquez, C.S. Bovais, K. Cochrell, K.C. Goins, R. Barbehenn, D.S. Katzer, K. Ikossi-Anastasiou, and Marcos J. Montes, " Compact, Lightweight Payload for Covert Data Link using a Multiple Quantum Well Modulating Retro-reflector on a Small Rotary-Wing Unmanned Airborne Vehicle," SPIE Proceedings, Vol. 4127-30, July, 2000.

35. S.C. Binari, K. Ikossi-Anastasiou, J.A. Rousos, D. Park, D.D. Koleske, A.E. Wickender, and R.L. Henry, "GaN Electronic Devices for Microwave Power Applications," 2000 International GaAs MANTECH Conference, Washington, DC, May 2000.

36. W.S. Rabinovich, G.C. Gilbreath, C. Bovais, K. Cochrell, H.R .Burris, M. Ferraro, M. Vilcheck, R. Mahon, K. Goins, I. Sokolsky, J. Vasquez, T. Meehan, R. Barbehehn, D.S. Katzer,K. Ikossi-Anastasiou, "Infrared data link using a multiple quantum well modulating retro-reflector on a small rotary-wing UAV," Aerospace Conference Proceedings, 2000 IEEE , Vol. 3 ,pp. 93-100, March 2000.

37. S.C. Binari, K. Ikossi-Anastasiou, J.A. Rousos, R.L. Henry, D.D. Koleske, and A.E. Wickender, " Traps in GaN HEMTs: where are they and how do we find them?" Wide bandgap III-Nitride Workshop, Richmond VA, March 2000.

38. W.S. Rabinovich, R. Mahon, S.R. Bowman, D.S. Katzer and K. Ikossi-Anastasiou, "Lock-in holography using optically addressed multiple quantum well light modulators", Optics Letters, August 15, 1999.

39. P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C. Binari, K. Ikossi-Anastasiou, M. G. Ancona, R.L. Henry, D.D. Koleske, and A.E. Wickenden, "Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors," International Journal of Nitride Semiconductor Research, 4S1, G6.35, Materials Research Society, 1999.

40. A.E. Wickenden, R.L. Henry, D.D. Koleske, R.J. Gorman, M.E. Twigg, M. Fatemi, J.A. Freitas, Jr., J.C. Culbertson, S.C. Binari, and K. Ikossi-Anastasiou " The control of GaN microstructure and its impact on device performance," International Semiconductor Device Research Symposium meeting, Charlottesville VA, December 1999.

41. D.S. Katzer, W.S.Rabinovich and K. Ikossi-Anastasiou "Optimization of buffer layers for InGaAs/AlGaAs PIN optical modulators grown on GaAs substrates by molecular beam epitaxy", 18th North American Conference on Molecular Beam Epitaxy, October 1999.

42. C. Binari, K. Ikossi-Anastasiou, H.B. Dietrich , D. Park, W. Kruppa, H.B. G. Kelner, R.L. Henry, A.E. Wickenden, and D.D. Koleske, "AlGaN/GaN HEMTs for Microwave Power Applications," First GaN Electronic Device Workshop (MURI), Ithaca, New York, August 1999.

43. S.C. Binari, K. Ikossi-Anastasiou , R.L. Henry, D. Park, W. Kruppa, H.B. Dietrich , A.E. Wickenden, and D.D. Koleske, "Fabrication and Characterization of AlGaN/GaN HEMTs", International Union of science and Radio (USRI), Toronto, Canada, August 1999.

44. W. S. Rabinovich, R. Mahon, S. R. Bowman, D. S. Katzer and K. Ikossi-Anastasiou, "Subtractive imaging using optically addressed multiple quantum well light modulators", Spatial Light Modulators and Integrated Optoelectronic Arrays, April 1999.

45. G. Beadie, W. S. Rabinovich, D. S. Katzer and K. Ikossi-Anastasiou, "Active binary phase gratings using multiple quantum well modulators", Spatial Light Modulators and Integrated Optoelectronic Arrays, OSA Spring Topical Conference , April 1999.

46. W. S. Rabinovich, R. Mahon, S. R. Bowman, D. S. Katzer and K. Ikossi-Anastasiou, "Lock-in holography using optically addressed multiple quantum well light modulators", Invited presentation at CLEO 99, pp. 49-50, May 1999.

47. J.D. Albrecht , P.P Ruden, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona," New Materials Theory Based Model For Output Characteristics Of AlGaN/GaN Heterostructure Field-Effect Transistors," 1999 Fall Materials Research Society Meeting, Boston MA, MRS 1999.

48. J.D. Albrecht, P.P. Ruden, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, and A.E. Wickenden, "Current voltage characteristics of ungated AlGaN/GaN heterostructures, 1999 Spring Materials Research Society Meeting., San Francisco, CA , MRS 1999.

49. G. Charmaine Gilbreath, W.S. Rabinovich, R. Mahon, M.R. Corson, M. Ferraro, D.S. Katzer, K. Ikossi-Anastasiou, T. Meehan and J. F. Kline, "Large Aperture quantum Well Shutters for fast retroreflected optical data links in free space," SPIE vol.3707-81, pp.1-6, 1999.

50. S.C. Binari, K. Ikossi-Anastasiou, D. Park, H.B. Dietrich, R. L. Henry, D.D. Koleske, and A.E. Wickenden, "Fabrication and Characterization of AlGaN/GaN HEMTs" Materials Research Society, MRS, Fall 1998 MRS.

51. G. Charmaine Gilbreath, W.S. Rabinovich, R. Mahon, D.S. Katzer, K. Ikossi-Anastasiou, M.R. Corson, J.F. Kline, J. Resnick, H. C. Merke, and M. J. Vilcheck "Modulating Retroreflector Architecture using multiple quantum wells for free space optical communications" SPIE vol.3491, pp.581-586, 1998.

52. D. McMorrow, J. S. Melinger, A. R. Knudson, S. Buchner, H. Dietrich, K. Ikossi-Anastasiou, S. C. Moss, D. Engelhardt, T. Childs, and A. B. Campell,"Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by transient reflectivity technique," IEEE Transactions of Nuclear Science, vol. 44, pp. 2290-2296, December 1997.

53. K. Ikossi-Anastasiou, N. Valsaraj and R. Sabbah, "Pulsed measurements on InAlAs/InGaAs HBTs with enhanced performance," in Proceedings of Sixteen Biennial IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell University, Ithaca, New York, pp. 287- 296, August 1997.

54. N. Valsaraj, R. Sabbah, W. Jones, K. Ikossi-Anastasiou, "Performance of InAlGaAs/InGaAs HBTs with Tunneling AlAs Barrier Layer,"in Proceedings of Sixteen Biennial IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell University, Ithaca, New York, pp. 154-163, August 1997.

55. D. McMorrow, J. S. Melinger, A. R. Knudson, S. Buchner, H. Dietrich, K. Ikossi-Anastasiou, S. C. Moss, D. Engelhardt, T. Childs, and A. B. Campell, "Correlation of single-event phenomena in GaAs circuits with carrier lifetime in LT GaAs buffer layers," in Proceedings of 34th Annual International IEEE Nuclear and Space Radiation Effects Conference (NSREC), Snowmass Village, Colorado, pp. PH3 1-5, July 1997.

56. K. Ikossi‑Anastasiou, W. Jones, R. Sabbah, N. Valsaraj, "Emitter size effects in high speed HBTs," in Proceedings of the 29th IEEE Southeastern Symposium on System Theory, pp. 410-413, March 1997.

57. W.S. Rabinovich, S.R. Bowman, R. Mahon, A. Walsh, G. Beadie, C.L. Adler, D.S. Katzer, and K. Ikossi-Anastasiou, "Gray-scale response of multiple-quantum-well spatial light modulators," Optical Soc. of America B, vol. 14, pp. 2235-2241, October 1996.

58. N. Valsaraj, R. Sabbah, W. Jones, K. Ikossi-Anastasiou, C. S. Kyono, S. C. Binari, W. Kruppa, H. Dietrich, "High-Speed Semiconductor Devices for Communication Systems" in Proceedings of 28th IEEE Southeastern Symposium on System Theory, pp.353-357, April 1996.

59. C.M. Krowne, K. Ikossi-Anastasiou, and E. Kougianos, "Early voltage in heterojunction bipolar transistors: Quantum tunneling and base recombination effects," Solid State Electronics, vol. 38, pp. 1979-1991, December 1995.

60. K. Ikossi-Anastasiou, S. Binari, G. Kelner, B. Boos, C. Kyono, and J. Mittereder, G. L. Griffin, "Wet chemical etching with lactic acid solutions for InP based semiconductor devices," J. Electrochemical Soc., vol. 142, pp. 3558-3564, October 1995.

61. C.M. Krowne, K. Ikossi-Anastasiou, E. Kougianos, "Temperature dependence of Early voltage in HBTs: Theory, Simulations, and Experiment," 1995 International Semiconductor Device Research Symposium, December 1995.

62. K. Ikossi-Anastasiou, S. Binari, G. Kelner, B. Boos, C. Kyono, J. Mittereder, "Lactic acid solutions for wet chemical etching of InP for microelectronic devices," accepted for presentation at the 22nd State-of-the-Art Program on Compound Semiconductors XXII (SOTAPOCS) Symposium, in Extended abstracts of the 187th Electrochemical Society meeting, Reno Nevada, May 1995.

63. K. Ikossi-Anastasiou, S. Binari, G. Kelner, B. Boos, C. Kyono, J. Mittereder, "Selective and non-selective lactic acid solutions for etching InP based semiconductor devices," (WOCSEMMAD '95), New Orleans, LA, February, 1995. Invited.

64. S. R. Bowman, W. S. Rabinovich, C. S. Kyono, D. S. Katzer, and K. Ikossi-Anastasiou, "High resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells," Applied Physics Letters, vol. 65, pp. 956-958, August 1994.

65. C. Kyono, S. Binari, and K. Ikossi-Anastasiou, "Gain enhancement in InAlAs/InGaAs HBTs using an emitter ledge," Journal of Applied Physics, vol. 76, pp. 1954-1955, August, 1994.

66. C. Kyono, K. Ikossi-Anastasiou, W. S. Rabinovich, S. R. Bowman, D. S. Katzer, and A. J. Tsao, "GaAs/AlGaAs multi-quantum well resonant photorefractive devices fabricated using epitaxial lift-off," Applied Physics Letters, vol. 64, pp. 2244-2246, April, 1994.

67. K. Ikossi-Anastasiou, E. Kougianos, C. S. Kyono, and S. C. Binari, "Temperature dependence of Early voltage in narrow base AlGaAs/GaAs HBTs," Workshop on Compound Semiconductor Material and Devices (WOCSEMMAD '94), San Francisco, CA, February, 1994. Invited.

68. K. Ikossi‑Anastasiou, "GaAsSb for heterojunction bipolar transistors," IEEE Transactions on Electron Devices, vol. 40, pp. 878-884, May, 1993.

69. K. Ikossi-Anastasiou, M. S. Ahmed, and Z. M. Khwaja, "Low specific contact resistivity GaAsSb P-type ohmic contacts for AlGaAs/GaAs based devices," 19th State-of-the-Art Program on Compound Semiconductors XIX (SOTAPOCS) Symposium, in Extended abstracts of the 184th Electrochemical Society meeting, (The Electrochemical Society, Fall meeting, New Orleans, LA, October, 1993).

70. K. Ikossi-Anastasiou, A. Ezis, K. R. Evans, and C. E. Stutz, "Low temperature characterization of high current gain graded emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor," IEEE Electron Device Letters, vol. 13, pp. 414-417, August, 1992.

71. C. S. Kyono, S. C. Binari, W. Kruppa, K. Ikossi-Anastasiou, and H. S. Hier, "InAlAs/InGaAs heterojunction bipolar transistors with a strained AlAs etch-stop layer," Electronics Letters, vol. 28, pp. 1388-1390, July, 1992.

72. . K. Ikossi-Anastasiou, D. K. Johnstone, A. Ezis, K. R. Evans, and C. E. Stutz, "Interface states in regrown GaAs p-n junctions by selective molecular beam epitaxy," Applied Physics Letters, vol. 61, pp. 297-299, July, 1992.

73. K. Ikossi-Anastasiou "Exploratory antimony containing heterojunction bipolar transistors," in Proceedings of the 1992 SPIE Symposium on Compound Semiconductor Physics and Devices (SPIE, Somerset, NJ, March 1992), pp. 41-52.

74. K. Ikossi-Anastasiou, A. Ezis, K. R. Evans, and C. E. Stutz, "Low temperature characterization of high current AlGaAs/GaAs narrow base heterojunction bipolar transistor," in Proceedings of the 1992 SPIE Symposium on Compound Semiconductor Physics and Devices (SPIE, Somerset, NJ, March, 1992), pp. 33-40.

75. L.L. Liou, A. Ezis, K. Ikossi‑Anastasiou, and C. I. Huang, "Simulation of the rf performance of an AlGaAs/GaAs heterojunction bipolar transistor: Application of fast Fourier transform," Electronics Letters, vol. 27, pp. 523-524, March, 1991

76. K. Ikossi-Anastasiou, A. Ezis, K. R. Evans, and C. E. Stutz, "Double heterojunction bipolar transistor in the Al_xGa_1-xAs/GaAs_1-ySb_y system," Electronics Letters, vol. 27, pp. 142-144, January, 1991.

77. L.L. Liou, A. Ezis, K. Ikossi‑Anastasiou, K. R. Evans, C. E. Stutz, and R. L. Jones, "DC characteristics of pnp AlGaAs/GaAs narrow base heterojunction bipolar transistors," Electronics Letters, vol. 25, pp. 1396‑1398, September, 1989.

78. A. Ezis, L. L. Liou, K. Ikossi‑Anastasiou, K. R. Evans, C. E. Stutz, and R. L. Jones, "A high gain (Ga,Al)As/GaAs heterostructure bipolar transistor with an equilibrium depleted spike‑doped base," IEEE Electron Device Letters, vol. EDL‑10, pp. 168‑170, April, 1989.

79. K. Ikossi‑Anastasiou, A. Ezis, and A. K. Rai, "Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contacts," IEEE Transactions on Electron Devices, vol. ED‑35, pp. 1786‑1792, November, 1988.

80. C.I. Huang, K. Ikossi‑Anastasiou, M.J. Paulus, C. E. Stutz, R.L. Jones, K.R. Evans and C.A. Bozada, "Temperature effects of double barrier diodes with high peak‑to‑valley ratio," in Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor for Devices and Circuits, pp. 356‑364, IEEE, Ithaca, N.Y., August, 1987.

81. K. Ikossi‑Anastasiou and K.P. Roenker, "Refinements in the method of moments for analysis of multiexponential capacitance transients in deep‑level transient spectroscopy," Journal of Applied Physics, vol. 61, pp. 182‑190, January, 1987.

82. K. Ikossi‑Anastasiou and K.P. Roenker, "Capacitance transient analysis by the method of moments," Abstracts of OS/APS & SOS/AAPT meeting, paper CA.6, April, 1985.

83. K. Ikossi‑Anastasiou, K.P. Roenker and C. Baylis, "Analysis of deep level transient spectroscopy data by the method of moments," 2nd International Symposium on VLSI Science and Technology, Electrochemical Society Extended Abstracts, vol. 84‑1, May, 1984.

84. K.P. Roenker and K. Ikossi‑Anastasiou, "Silicon shadow mask preparation by vertical preferential etching," IEEE Electron Device Letters, vol. EDL‑3, pp. 418-419, December 1982.

INVITED PRESENTATIONS

1.    Panelist. American Association of University Women. A career in Electrical Engineering. “Beautiy is within” Program. Mount Vernon High School. Alexandria VA, March, 2005.

2.    “Nanostructures and Advance Materials in Electronic Devices,” Colloquium of the laboratory for computer design of materials, school of computational sciences, George Mason University, Fairfax, VA November 8, 2004.

3.    Symposium key note address, 2004 IEEE-WIE Spring Symposium, “Writing Winning Proposals,” College Park Maryland, May 8, 2004.

4.    Panelist "Status of Women in Engineering" IEEE-MTTs-IMS, Phoenix Arizona,  2001.

5.    "Enabling Technologies" National Science Foundation, VA, May 1997.

6.    "Compound semiconductor devices," Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA, February, 1997

7.    "Recent advances in compound semiconductor microelectronic devices", Dept. of Mechanical Engineering, Louisiana State University, Baton Rouge, LA, September, 1993.

8.    "A career in electronics," Bishop Joseph V. Sullivan High School, Baton Rouge, LA, April, 1992.

9.    “Semiconductor materials for high-speed microelectronic devices," Dept. of Mechanical Engineering, Louisiana State University, Baton Rouge, LA, October, 1991

10.  “Performance of narrow base heterojunction bipolar transistors," the Center of Advanced Electron Devices and Systems, University of Texas, Arlington, TX, November, 1990.

11.  “High speed heterojunction bipolar transistors," Naval Research Laboratory, W ashington, DC, May, 1990.

PUBLICATIONS

Kiki Ikossi, List of Publications